Tungsten bis(tertbutylimide) dimethylamide (diisopropylacetamidinate) [W(NtBu)2(NMe2){(iPrN)2CMe}] (and for comparison [W(NtBu)2(NMe2)2]) has been applied as MOCVD precursor for the growth of tungsten nitride (WN) thin films on Si (100) substrates in a temperature range of 500–800 °C in commercial MOCVD reactor (AIXTRON). Precursor performance for the deposition of WN thin films ( [W(NtBu)2(NMe2){(iPrN)2CMe}] vs. [W(NtBu)2(NMe2)2]) was checked either under single source precursor (SSP) conditions, or in the presence of NH3 as reactive gas. The films deposited under SSP conditions consisted of a mixture of WCx and WNx phases, whereas crystalline WN thin films were obtained at higher temperatures (T ≥ 600 °C) with addition of NH3 (according to XRD). Complementary techniques such as RBS, NRA and XPS were applied to study the film elemental composition: the layers grown with NH3 had increased levels of N and a decreased C content, compared to the films grown under SSP conditions. Lower resistivity WN films were obtained deposited under NH3, compared to the films deposited under SSP conditions.[i]
[i] N. B. Srinivasan, T. B. Thiede, T. de los Arcos, D. Rogalla, H.-W. Becker, A. Devi, R.A. Fischer, « MOCVD of tungsten nitride thin films: Comparison of precursor performance and film characteristics », Phys. Status Solid. A, 2014, Vol.211, Iss.2, p.260-266, https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201330127