Bi2O3 and SrBiTaO films were grown by liquid delivery MOCVD from Bi(allyl)3, BiPh3, Bi(alkyl)3 precursors and, Sr[Ta(OEt)5(me)]2 as SrTa source., The growth rate of Bi2O3 and SrBiTaO from Bi(allyl)3, BiPh3 was low (~10 nm/h at 0.35 mbar); eight times higher (~400 nm/h) growth rates of BiOX and SBT films were observed for the Bi(alkyl)3 precursor. A decrease of the deposition pressure reduced the deposition rate of Bi2O3, and SBT, but improved thickness uniformity over 150 mm wafer surface. The XPS measurements showed a deficit of bismuth in the SBT films even though the concentration of the ffom Bi(allyl)3, BiPh3precursor was several times higher compared to the Sr-Ta precursor; this problem disappeared when Bi(alkyl)3 source was used. [255]