NICKEL CYCLOPENTADIENYLS-ALLYLS

Cyclopentadienylallylnickel NiCp(allyl)

Fig. NiCp(allyl) formula

    Cyclopentadienylallylnickel NiCp(allyl) (M = 164.86) is liquid (melting point 10 °C), density d = 1.31 g/mL at 25°C.

    NiCp(allyl) is volatile (vapor pressure 10 Torr / 73 °C).  TGA/DTA studies showed that it slightly decomposes at temperatures <200 °C.

NiCp(allyl) for metal Ni films by MOCVD

    Cyclopentadienylallylnickel CpNi(allyl) has been used for CVD growth of Ni metal, with H2 carrier gas. High deposition rate (13 nm/min) with  low residual carbon (4% C) at low deposition temperature at (120 °C) has been achieved; low growth temperature was possible due to interactions of CpAllylNi and H2. CpAllylNi is superior to (MeCp)2Ni with respect to volatility and leaving residual carbon in the deposited film. Therefore, it is one of the best precursors for depositing Ni thin films with low carbon impurity by low-pressure CVD.[i]

[i] T. Kada, M.Ishikawa, H.Machida, A.Ogura, Y.Ohshita, K.Soai, J. Cryst. Growth,2005, Vol.275,Iss.1-2, e1115-e1119, doi.org/10.1016/j.jcrysgro.2004.11.198, www.sciencedirect.com/science/article/pii/S0022024804016434

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