Ethylimido-tris(diethylamido)niobium Nb(=NEt)(NEt2)3 is liquid at RT.
Nb(=NEt)(NEt2)3 (combined with NH3) was reported to produce NbN layers at 200-400°C (with high step coverage), as well as for the MOCVD of LiNbO3 at substrate temperature 300°C.
Tert-butylimido-tris(dimethylamido)-niobium (TBTDMN) Nb(=NtBu)(NMe2)3 as a single-source precursor under similar growth conditions produced heavily C-contaminated
NbN layers. (high amounts of C (26 at.-%) and O (12 at.-%) were detected by SNMS analysis). The specific resistivities were in the range 3600–4000 μΩ·cm. [i]
[i] A. Baunemann, D. Bekermann, T. Thiede, H. Parala, M. Winter,C. Gemel, R. A. Fischer, J. Chem. Soc, Dalton Trans. 2008, 28, 3715.
The commercially available niobium tert-butylimide tris-diethylamide (TBTDEN) was investigated as precursors for the MOCVD of NbN thin layers (with NH3 as N source,
which is necessary to minimize C impurity) using modified AIX-200RF reactor. The microstructure, composition, morphology, and electrical properties of the grown NbN layers were studied: specific resistivities as
low as 500–600μΩ·cm and a work function of 4.72 eV were achieved. [i],[ii], [iii]
[i] R. Fix, R. G. Gordon, D. M. Hoffman, Chem. Mater. 1993, 5, 614.
[ii] A. Baunemann, D. Bekermann, T. Thiede, H. Parala, M. Winter,C. Gemel, R. A. Fischer, J. Chem. Soc, Dalton Trans. 2008, 28, 3715.
[iii] T. Thiede, H. Parala, K. Reuter, G. Passing, S. Kirchmeyer, J. Hinz, M. Lemberger, A. Bauer, R. A. Fischer, ECS Trans. 2008, 16, 229.
Tert-butylimido-[tris(ethylaminoethyl)amine]-niobium [Nb(=NtBu){N(CH2CH2-NEt)3}] (and for comparison [Nb(NEt2)4] ) were applied for plasma-assisted MOCVD growth
of NbN layers at 350-800 °C growth temperatures (with hydrazine plasma as the N source). δ-NbN contaminated by C(11%) and O (13%) were obtained at 750 °C, but their electrical properties were not reported.[i]
[i] X. Liu, R. Babcock, M. A. Lane, J. A. Belot, A. W. Ott, M. V. Metz, C. R. Kannewurf, R. P. H. Chang, T. J. Marks, Chem. Vap. Deposition, 2001, 7, 25.