Zr2(OiPr)6(thd)2 combines the advantages of volatility associated with Zr(OR)4 compounds with the good ambient stability of Zr ß-diketonates. In particular it matches the growth characteristics of Pb(thd)2 , unlike Zr(thd)4 (Fig.), what is important for the deposition of PZT films.[[i]]
According to the TGA analysis, the precursor evaporates at 220-260°C with only negligible residue of ~3%, indicating its good suitability as an MOCVD precursor for the deposition of Zr-containing films. (Fig.) For example, the PZT films were grown at 2 μm/h growth rate on Si(100) substrates at 525°C, using 220°C vaporiser temperature with reactor pressure 3.5 mbar.[244, 738]
As a mixed alkoxide/β-diketonate compound, [Zr(OiPr)3(thd)]2 has lower thermal stability than homoleptic β -diketonate Zr(thd)4, allowing the deposition of ZrO2 films over a much wider temperature range compared to Zr(thd)4, (at least from 250°C to 650°C) This makes this precursor also suitable for yttria-stabilised ZrO2 protective coatings.
[i]A.C. Jones, T.J. Leedham, P.J. Wright, M.J. Crosbie, H.O. Davies, K.A. Fleeting and P. O’Brien, J Eur. Ceramic Soc., 1999, 19, 1431-1434
As a mixed alkoxide/β-diketonate compound, [Zr(OiPr)3(thd)]2 has lower thermal stability than homoleptic β -diketonate Zr(thd)4, allowing the deposition of ZrO2 films over a much wider temperature range compared to Zr(thd)4, (at least from 250°C to 650°C) This makes this precursor also suitable for yttria-stabilised ZrO2 protective coatings