Methylpentacarbonylmanganese MnMe(CO)5, in combination with diethylselenide SeEt2, has been applied as precursor for the growth of MnSe layers by MOCVD, grown epitaxially on various substrates (Si (important for microelectronics) as well as InP, GaSb, GaAs, ZnTe/GaAs, etc.(on those MnSe can be grown in the zinc blende phase for very thin layers). Pyrolysis of the precursors was performed in a gradient reactor under H2 flow, between 280-550?°TC. Depending on the growth conditions, the grown MnSe layers had either zinc blende or rock salt structure. For the first time the lattice constant of zincblende MnSe (aMnse (oct)=5.818Å) was determined by XRD, confirming the close approximation (a ∼ 5.9Å) used from the Zn1-xMnxSe alloy. The grown MnSe were characterised by temperature dependant photoluminescence (PL) experiments at 2-200K. The deposited layers had visible Mn++ transitions at 2.12-5eV; and some other features are visible at 2.3-4, 2.7, and 3.0eV. The energy gap transition of tetrahedral thin film layers of MnSe was reported for the first time in PL spectra. [[i]]
Methylmanganese pentacarbonyl MnMe(CO)5, combined with SeEt2 as Se source, has been applied as Mn precursor for the deposition of MnSe
layers by MOCVD [[ii]]
[i] A Study of the Photoluminescence and Reflectivity Spectra of MOCVD Grown MnSe, M. Di Blasio, L. Aigouy, M. Averous, J. Calas, P. Tomasini, A. Haidoux, J.C. Tedenac, MRS Proceedings / Volume 340 / 1994, DOI: http://dx.doi.org/10.1557/PROC-340-527, http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8141315
[ii] Ref 15 in T Qin, J Lu, S Wei, P Qi, Y Peng, Z Yang, Inorganic Chemistry, 2002, and refs therein, “ α-MnSe crystallites through solvothermal reaction in ethylenediamine”
MeMn(CO)5 was used as precursor for the MOCVD
growth of Cd1−xMnxTe (111B) epilayers on GaAs (100) substrates; rhe epitaxial quality of the deposied films was measured by HRTEM and XRD. The quaternary alloy Hg1−x−yCdxMnyTe was grown by in-situ annealing of HgTe overlayers on Cd1−xMnxTe
epilayers. Adherent films of Hg1−xMnxTe on glass were as well grown by MOCVD. The electrical properties showed semi-metal behaviour, and XRD and other measurements indicated a zinc-blende structure. [[i]]
[i]G.N. Pain, N. Bharatula,G.I. Christiansz, M.H. Kibel, M.S. Kwietniak, C. Sandford, T. Warminski, J. Cryst. Growth, Vol. 101, Iss.1–4, 1990, p. 208–210, “Use of MeMn(CO)5 in the low temperature MOCVD growth of Mn containing alloys”, http://www.sciencedirect.com/science/article/pii/002202489090967P
[II] Pain G. N.; Russo S. P.; Elliman R. G.; Wielunski L. S.; Gao D.; Glanvill S. R. ; Rossouw C.J. ; Stevenson A.W. ; Rowe R.S. ; Deacon G. B.; Dickson R.S.; West B.O.; “Cd1−xMnxTe/Cd1−yMyte superlattices by low temperature MOCVD”, Australian conference on II-VI semicond. comp. No4, Warburton Victoria , AUSTRALIE (04/1990), 1991, vol. 15, no.1, pp. 35-43, http://cat.inist.fr/?aModele=afficheN&cpsidt=4545928
MnMe (CO)5 has been evaluated among other Mn compunds as MOCVD precursor for the growth of Mn-doped (or higher Mn%-contaning) II–VI semiconductor layers useful for telecommunication
and information application. Thin films Mn-doped II-VI materials were grown by MOCVD at low temperature in order to improve crystallinity and reduce solid state diffusion effects. MnMe(CO)5 proved to be the most promising compound, the details of its preparation
and purification were reported; the precursor was .studied by thermal analysis. Previously reported manganese MOCVD precursors had a too high decomposition temperature to be used directly in low temperature growth
without precracking or plasma assistance. The properties and preparation of some manganese compounds potentially applicable in low temperature MOCVD was reported. [[i]]
[i] G.I. Christiansz, T.J. Elms, G.N. Pain, R.R. Pierson, J. Cryst. Growth, Vol.93, Iss.1–4,1988,p.589,“Evaluation of some manganese feedstocks for MOCVD”,http://www.sciencedirect.com/science/article/pii/002202488890588X
Benzylmanganese pentacarbonyl Mn(CH2Ph)(CO)5 (as well as similar methylmanganese pentacarbonyl MnMe(CO)5) was reported to be volatile, air and
water stable solids prepared in high yield and readily purified by sublimation.[[i]]
[i] G.N. Pain, J. Crystal Growth, Vol.107, Iss.1–4, 1 Jan 1991, p.632–636, Metalorganic Vapor Phase Epitaxy 1990, Proceedings on Metalorganic Vapor Phase Epitaxy and workshop on MOMBE, CBE, GSMBE, and related techniques, “HRTEM studies of defects and interdiffusion in Hg1−x−yMnyCdxTe (O⩽x, y⩽1) grown by low temperature MOCVD”
Mn(CH2Ph)(CO)5 (and for comparison MnMe(CO)5), (combined with CdMe2 as Cd- and TeEt2 as Te-sources), was applied
as precursor for MOCVD growth of specular (100)- and (111)B-oriented Cd1−yMnyTe (0 < y < 0.8) epilayers on GaAs(100), GaAs/Si(100), InP, sapphire and glass substrates at 320–350°C in a horizontal reactor at atmospheric pressure. Local
thickness mapping (providing thickness uniformity information) were measured by simultaneous PIXE and RBS, profilometry, SIMS sputter times, FTIR. Diluted magnetic Cd1−yMnyTeCd1−xMnxTe strained layer superlattices were characterized by SIMS, PIXE,
RBS, HRTEM of ultramicrotomed cross-sectional samples, double-crystal XRD rocking curve and satellite analysis/ simulation, X-ray topography, WDX/EPMA, optical transmission and FTIR. Mn (and for comparison Cd) cation interdiffusion profiles were obtained by
analytical electron microscopy of ultramicrotomed cross sectional samples using a fine 10 nm electron beam probe; interdiffusion of Mn was comparable to Cd. The Cd1−yMnyTe (111)B layers demonstrated fine scale 180°C rotational twinning. Preferential
(011) growth on (100) GaAs was leading to anisotropic micrograting-like X-ray diffraction at glancing angles; smoother materials were obtained on (111B), (311A), (311B), and (100) 2°off-toward-(110) GaAs. The quaternary alloy Hg1−x−yMnyCdxTe
has been successfully prepared by low temperature interdiffused multilayer process (IMP) MOCVD.[[i]]
[i] G.N. Pain, T. Warminski, S.Sulcs, M.S.Kwietniak, Appl. Surf. Sci., vol. 48–49, 1991, p.76–88, Characterization of low-temperature MOCVD Cd1−xMnxTe thin films