GADOLINIUM ALKYLSILYLAMIDES

Gadolinium tris [bis(trimethylsilyl)amide] Gd[N(SiMe3)2]3

Fig. Formular of Gd[(N(SiMe3)3]3

Gadolinium tris [bis(trimethylsilyl)amide] Gd[N(SiMe3)2]3 ( M = 638.40) is solid having melting point 67-90°C.

Vapour pressure of Gd[N(SiMe3)2]3

Vapour pressure of  Gd[N(SiMe3)2]3 was studied.

The dependence of vapour pressure of vs. 1000/T is presented in Fig.

Thermal properties of Gd[N(SiMe3)2] were studied by TGA/DSC. (Fig). At ATM pressure the evaporation of the complex occurred at ~300° and ca. 13-15% residue was observed, whereas  under vacuum practically full evaporation of the complex at ~220°C with only  1-2% residue was observed. []

[Gd[N(SiMe3)2]3 (+H2O) for GdOx by ALD

Fig. GdOx growth rate (ALD) vs. Gd[N(SiMe3)2]3 pulse length for different substrate temperatures

Gd[N(SiMe3)2]3 combined with H2O as oxygen source (both supplied in alternate pulses), was applied as precursor for the ALD growth of GdOx films as potential lanthanide oxide alternative to SiO2 as the dielectric insulating layer in sub-0.1 μm CMOS technology.  Growth was performed at 150, 250 and 300°C temperature; growth was not self-limiting, even at low temperatures.[[i]]

[i] A.C.Jones, H.C.Aspinall, P.R. Chalker, R.J. Potter, K. Kukli, A. Rahtu, M. Ritala, M. Leskelä, Mater. Sci. Eng.B, 2005, Vol.118, Iss.1–3, p. 97–104, EMRS 2004, Symposium D: Functional Oxides for Advanced Semiconductor Technologies, “Recent developments in the MOCVD and ALD of rare earth oxides and silicates”

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