Beryllium halides, for example Beryllium dichloride BeCl2, were reported to be not suitable precursor for the ALD growth of Be-contaning layers. The reason is relatively high sublimation temperature of BeCl2 (>200 °C), precluding the use of the Cambridge ALD deposition system restricted to an upper temperature limit of 200°C. Subsequently, a BeCl2 pulse could not be observed even if heating was carried out . [[i]]
However, for CVD systems allowing higher evaporation temperature (>200°C), BeCl2 could be potentially applied for the Be-contaning layers.
[i]J. H. Yum, T. Akyol, M. Lei, T. Hudnall, G. Bersuker, M. Downer, C. W. Bielawski, J. C. Lee, and S. K. Banerjee, J. Appl. Phys. 109, 064101 (2011); doi:10.1063/1.3553872, “Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices”