Magnesium acetate Mg(CH3COO)2 dissolved in ethanol or butanol was applied as precursor for the growth of MgO thin films (100-500nm) at 450 - 600°C by AA CVD (pyrolysis of an aerosol produced by ultra-high frequency spraying of a solution in air). Highly (100) textured polycrystalline films were on oxydized silicon wafers. Grain size varied between 60 and 150 nm depending on deposition parameters (XRD, SEM). Electrical properties were examined by complex impedance spectroscopy and I(V) measurements: resistivity (>1012 Ω·cm) and dielectric constant were determined. Grown MgO films were applied as buffer layers for high-Tc superconductors.[221]
Magnesium 2-ethylhexanoate Mg(C7H15COO)2, a nontoxic and easy to handle material, was applied for the growth of MgO layers by low-temperature atmospheric-pressure CVD at 450-550°C (depositions carried out in air). Highly [100]-textured polycrystalline films were obtained on amorphous substrates at a reaction temperature >450°C. [222]
Magnesium naphtenate Mg(C11H7O2)2 , in combination with Al(acac)3 (both dissolved in toluene) has been successfully used as precursor for combustion chemical vapor deposition (combustion CVD) growth of magnesium spinel MgAl2O4 on silica substrates at flame temperature 1100°C at the surface of the substrate, in open atmosphere. Total metal concentrations in the flammable solutions ranged from 0.002 to 0.004 M. Dense, nodular films with the face centered cubic spinel crystal lattice having thicknesses up to 1 μm were grown at deposition rates of 1.2 to 2.0 μm/h. TEM indicated that projected grain sizes ranged from 8 nm to 88 nm. Electron diffraction performed with TEM verifies the spinel crystal structure and quantitative EDS showed weight percents of the constituent elements close to the stoichiometric values. [223]