Zirconium (cyclopentadienyl) tris(tetrahydroborate) Zr(Cp)(BH4)3
and Zirconium bis(cyclopentadienyl) bis(tetrahydroborate) Zr(Cp)2(BH4)2 were used as precursors for the CVD growth of thin films of zirconium carbide-boride ZrCxBy as well as zirconium carbide ZrCx at temperatures
300–600°C for hard coating applications. Mass spectrometry fragmentation patterns were studied to rationalize trends in the deposition temperature and chemical composition of the obtained thin films. [[i]]
[i] K. Hankó, G. Vass, L. Szepes, J. Organomet. Chem., 1995, Vol.492, Iss2, p.235-239, ”Arene-transition metal complexes as precursors of hard coatings prepared by the chemical vapour deposition technique