Cerium tris(2,2-dimethyl-5-N-2-methoxyethylimino-3-hexanonate) Ce(tBu,Me,Me)3
Cerium tris(2,2-dimethyl-5-N-2-methoxyethylimino-3-hexanonate) Ce(tBu,Me,Me)3 has been synthezised and structurally characterized (by single crystal XRD). Ce(III) ketoiminates have been suggested to be a superior MOCVD precursor class, compared to conventional cerium β-diketonate precursors.
Ce(tBu,Me,Me)3 has been applied for the MOCVD deposition of epitaxial CeO2 buffer layers on (001) YSZ substrates at much lower temperatures (450−650°C) than was previously possible by other cerium β-ketoiminate precursors. Thus, films grown at 540 °C were smooth (rms roughness 4.3 Å) and exhibited good out-of-plane (Δω = 0.85°) and in-plane (Δφ = 1.65°) alignment. Film growth rate decreased and films tended to be smoother while increasing growth temperature. The grown CeO2 layers were applied as buffer for the deposition of high-quality YBa2Cu3O7-x films. [[i]]
[i] Nikki L. Edleman, Anchuan Wang, John A. Belot, Andrew W. Metz, Jason R. Babcock, Amber M. Kawaoka, Jun Ni, Matthew V. Metz, Christine J. Flaschenriem, Charlotte L. Stern, Louise M. Liable-Sands, Arnold L. Rheingold, Paul R. Markworth, Robert P. H. Chang, Michael P. Chudzik, Carl R. Kannewurf, and Tobin J. Marks
Inorg. Chem., 2002, 41 (20), pp 5005–5023, DOI: 10.1021/ic020299h,
“Synthesis and Characterization of Volatile, Fluorine-Free β-Ketoiminate Lanthanide MOCVD Precursors and Their Implementation in Low-Temperature Growth of Epitaxial CeO2 Buffer Layers for Superconducting Electronics”