Tungsten (toluene) tris(carbonyl) W(toluene)(CO)3 (and for comparison WH(L)(CO)3 (L=Cp, Me5Cp), W(cod)(CO)4 and W(cycloheptatriene)(CO)3 ) has been tested as precursor for the deposition of thin tungsten carbide films by cold-wall low pressure (LP) CVD. The deposited layers were analyzed by AES, XRD, SEM and electrical resistivity measurements. W(toluene)(CO)3 precursor (as well as W(cod)(CO)4 ) produced tungsten carbide layers having WC1-x and a-W2C crystalline textures (obtained at 540°C growth temperature), whereas layers deposited at 540°C using WH(L)(CO)3 (L=Cp, Me5Cp) and W(cycloheptatriene)(CO)3) were amorphous WC incorporating graphitic C. [i]
[i] K.K. Lai, H.H. Lamb, Chem. Mater. 1995, 7, 12, 2284–2292, « Precursors for Organometallic Chemical Vapor Deposition of Tungsten Carbide Films », https://doi.org/10.1021/cm00060a016 , https://pubs.acs.org/doi/pdf/10.1021/cm00060a016