Iron(III) acetylacetonate Fe(acac)3, combined with S(tBu)2 as S source, was used as precursor for
the deposition of thin FeS2 (pyrite) layers by hot‐wall low-pressure CVD. The dependence of growth rate, morphology, chemical composition (stoichiometry),
crystalline phases, and contaminants on various CVD parameters was investigated. Pyrite thin films with FeS2 layer thickness uniformity of <5 % over a length of 10 cm was achieved. Growth rates varied in the range 0.2-12 nm/min. The deposited films were
polycrystalline pyrite FeS2 having an indirect bandgap of 0.95 ± 0.05 eV, dark specific resistance of 0.5–1.0 Ω cm and the absorption coefficient 3 ± 1 × 105 cm–1 at λ = 500 nm. The deposited films contained no
detectable FeS phases at growth temperatures 300-340°C on glass and Si substrates.[[i]]
[i] B. Meester, L. Reijnen, A. Goossens, J. Schoonman, Chem. Vapor. Dep., 2000, Vol.6, Iss.3, p.121-128, https://doi.org/10.1002/(SICI)1521-3862(200006)6:3<121::AID-CVDE121>3.0.CO;2-S,
https://onlinelibrary.wiley.com/doi/abs/10.1002/(SICI)1521-3862(200006)6:3%3C121::AID-CVDE121%3E3.0.CO;2-S , « Synthesis of Pyrite (FeS2) Thin Films by Low‐Pressure MOCVD »
Iron tris(acetylacetonate)Fe(acac)3 is a useful MOCVD precursor for highly crystalline
(Zn,Fe)Fe2O4 films. [[i]]
[i] Mochizuki, S. et al. J. Phys. IV Colloq. 7(C1), 91, (1997)
Iron (2,2,6,6-tetramethyl-3,5-heptanedionate) Fe(thd)3 - Precursor for the formation of BaFe12O19 thin films on Al2O3 (0001) substrates in preferential orientation with the c-axis perpendicular to the substrate.[[1]]
Fe(thd)3 was also used as precursor for aerosol-assisted CVD of mixed-conducting ceramic films of Sr-Co-Fe perovskite
phases.[[ii]]
[1] Pignard, S. et al. J. Phys. IV Colloq. 7(C1), 483, (1997)
[ii] Xia, C. et al. J. Mater. Res. 13, 173, (1998)
Iron tris(dipivaloylmethanate) Fe(thd)3, combined with BiPh3 as Bi source and Y(thd)3 as Y source, was applied as Fe precursor for the epitaxial growth of bismuth‐substituted yttrium iron garnet thin films (Y,Bi)FeO layers by MOCVD on Gd3Ga5O12(111) substrates at 750 °C and reduced pressure
6 Torr; the growth rate of 200–500 Å/min was achieved, which is ~10 times faster than conventional sputtering method. The deposition behavior of single component including Fe2O3 was studied prior to the preparation of garnet films. Large Faraday rotation, − 7.5 × 104 deg/cm at λ=633 nm was obtained for the film with a Bi content of 2.5 atoms per formula unit, because of the high Bi substitution and
the crystalline perfection.[i]
[i] Masaru Okada, Shigehisa Katayama, and Koji Tominaga, J. Appl. Phys. 69, 3566 (1991); https://doi.org/10.1063/1.348498 , https://aip.scitation.org/doi/abs/10.1063/1.348498, « Preparation and magneto‐optic properties of Bi‐substituted yttrium iron garnet thin films by metalorganic chemical vapor deposition «