Ti amides–imide [Ti(µ-NtBu)(NMe2)2]2 applied as precursor for the growth of TiN layers by APCVD. TiN layers were almost stoichiometric, but with significant amounts of C and O, according
to XPS. Nitrogen in films was Ti bound, whereas C was both Ti bound and organic. Precursor decomposition mechanisms similar to Ti(tBu)(NMe2)3 were proposed involving both Ti-NR2 homolytic bond cleavage and amido ligand β-hydride activation.[i]
[i] R. M. Fix, R. G. Gordon and D. M. Hoffman, Chem. Mater., 2, (1990) 235.