Borazine (borazol) B3N3H6 is also called inorganic benzene, because of delocalisation of electrons (unpaired pair of electron from nitrogen atom can fill empty orbital of boron atom), resulting in benzene-type tautomeric forms with double B=N bonds, which cannot be distinguished, the electronic density is evenly distributed across the ring.
Properties: Borazine (borazol) B3H6N3: is colourless liquid (M =80.50 g/mol, d=0.81 g/cm3, m.p. -58°C, b.p. 161°C (55°C at 105 Pa). Accordingly, vapor pressure of borazine is 105 Pa at 55°C.
Borazine B3N3H6 was applied as single source precursor for the growth of boron nitride BNx thin films by thermal and plasma enhanced CVD; the composition and structure
of the obtained BNx films was studied. Thermal CVD (using either hot-wall or cold-wall reactor) at temperatures 475-550 °C produced amorphous B-rich films with composition BN0.67. However, plasma enhanced CVD consistently resulted in BN films having
1:1 B:N stoichiometry; however the hydrogen content of films grown at temperatures <300 °C was so high layers reacted with atmospheric moisture. Optimum conditions for obtaining stoichiometric BN layers with low H content were: low plasma power,
H2/borazine gas mixtures, substrate temperature 550 °C: BN layers deposited under these conditions were mixtures of poorly crystalline hexagonal and cubic BN films.[i]
[i] J. Kouvetakis, V. V. Patel, C. W. Miller, D. B. Beach, J. Vac. Sci. Technol. A 8, 3929 (1990); « Composition and structure of boron nitride films deposited by chemical vapor deposition from borazine », http://dx.doi.org/10.1116/1.576423, http://scitation.aip.org/content/avs/journal/jvsta/8/6/10.1116/1.576423