Tetraethyldistibine, Et4Sb2 was synthesized and characterized. Tetraethyldistibine was demonstrated to be useful as MOCVD antimony source
for p-type doping during low temperature MOCVD growth of Hg1-xCdxTe thin films. [[i]]
[i] R.S. Dickson, K.D. Heazle, G.N. Pain, G.B. Deacon, B.O. West, G.D. Fallon, R.S. Rowe, P.W. Leech, M. Faith, J. Organomet. Chem., 1993, vol. 449, iss. 1–2, p. 131-139, « Antimony sources for MOCVD. The use of Et4Sb2 as a p-type dopant for Hg1−xCdxTe and crystal structure of the adduct [Et4Sb2 · 2CdI2]n », https://doi.org/10.1016/0022-328X(93)80116-S, www.sciencedirect.com/science/article/pii/0022328X9380116S