(Trichlorsilyl) trichlormethane CCl3-SiCl3
(Trichlorsilyl) trichlormethane CCl3-SiCl3 has been applied as carbon precursor for the growth of amorphous carbon films on quartz and Si substrates at 500–1000°C by hot-wall low pressure CVD. The deposited carbon films were characterized by XRD, AFM, SEM, Raman. Films grown at 500°C contained 90% C and 10% Cl, while the films grown at 1000°C contained 100% C , according to XPS studies. On-line FT-IR studies detected SiCl4, CCl4 and Cl2C=CCl2 species in the decomposition by–products. The extrusion of dichlorocarbene, :CCl2, from SiCl3CCl3 should provide the source of carbon in the reaction. On Si substrates, an etching process at the film-substrate interface assisted the lift-off of the films from the substrates, making that the C films curled and formed rolls. [[i][ ]
[i] Yu-Hsu Chang, Lung-Shen Wang, Hsin-Tien Chiu, Chi-Young Lee, Carbon, Volume 41, Issue 6, 2003, Pages 1169–1174, http://144.206.159.178/ft/145/87148/1477807.pdf SiCl3CCl3 as a novel precursor for chemical vapor deposition of amorphous carbon films