Metallic zinc Zn has been applied as precursor for the growth of high carrier concentration n-type ZnO nanowires (without incorporating dopants intentionally) by CVD process modified with vapor trapping method. Nanowires having distinct morphologies and electrical properties (by electron microscopy and electrical transport studies) were obtained at different locations in the CVD system. [276]
The use of metallic Zn as zinc precursor, with H2O as oxygen source for the growth of thin films by atmospheric pressure CVD and comparison with systems Zn(acac)2(H2O) -C2H5OH, ZnCl2 - C2H5OH as precursors was studied. The properties of the films were studied by XRD and PL. The c - and a-axis oriented ZnO films were successfully grown on the c - and r -plane sapphire for the Zn-H2O system, the PL spectra of the obtained films were dominated by the near-band-edge (NBE) emission. For the Zn/H2O precursor combination, the adjustment of the supply ratio H2O to Zn gradually changed the PL emission in the visible region from red to the green-band (GB). The Zn-H2O system was determined to be the most suitable for the defect control. The accurate control of the Zn/O supply ratio was an important factor for controlling of the defects, as well as concentration of the residual impurities, as determined by the low temperature PL measurements. [[i] ]
[i] Tomoaki Terasako, Keisuke Taira, Kouta Taniguchi, Masakazu Yagi, Sho Shirakata,
Physica status solidi (c), Special Issue: 37th International Symposium on Compound Semiconductors (ISCS 2010), Volume 8, Issue 2, pages 509–511, February 2011
Structural and optical properties of ZnO films grown by atmospheric- pressure CVD methods using different source materials
Zn powder and H2O were applied as source materials for the atmospheric-pressure CVD growth of vertically aligned ZnO nanostrutures (nanorods, nanowalls) on sapphire substrates coated with Au nanocolloidal solutions; shapes of the nanorods strongly depended on degree of dilution of the solution. [277
Metallic Zn and elemental sulfur were the choice for the first ALD experiments in the 1970th for the growth of ZnS layers [6]
The elemental zinc was reported to be applied as reducing agent for the preparation of the low resistivity transition metal nitrides (zinc removes chlorine from the surface by forming volatile ZnCl2), and preparation of ZnS1−xSex solid solutions via surface anion substitution reactions by ALE method. [[i] ]
[i] Mikko Ritala, Applied Surface Science, Volume 112, March 1997, Pages 223–230 “Advanced ALE processes of amorphous and polycrystalline films”