Dialkyl aluminum acetylacetonate compounds (AlMe2(acac), AlEt2(acac), Al(iBu)2(acac) ) were synthesized, characterized and applied for the deposition
of Al2O3 thin films by low-pressure MOCVD at 400–520°C under an O2 or H2O vapor atmosphere. A kinetic model, supported
by in-line FTIR measurements, was applied to analyze the experimental data and compare the precursors properties. The model clearly distinguished the rate-determining steps of the heterogeneous process; the kinetic constants correlated to the molecular structure
of the precursors.[[i]]
[i]G. A. Battiston, G. Carta, G. Cavinato, R. Gerbasi , M. Porchia G. Rossetto, Chem.Vapor.Dep., 2001, Vol.7, Issue2, Pages 69-74, “MOCVD of Al2O3 Films Using New Dialkylaluminum Acetylacetonate Precursors: Growth Kinetics and Process Yields”
https://onlinelibrary.wiley.com/doi/abs/10.1002/1521-3862(200103)7:2%3C69::AID-CVDE69%3E3.0.CO;2-Q