Rhodium acetylacetonate bis(carbonyl) Rh(acac)(CO)2 was applied as precursor for the growth of rhodium films of acceptable purity (98 mass%Rh) by plasma enhanced CVD (under assistance of H2). Rhodium films thicker than 30–50 nm showed wrinkles and microcracks.
Rhodium (I) hexafluoroacetylacetonate bis(carbonyl), Rh(hfac)(CO)2 was applied as precursor for the deposition of Rh strips by laser-assisted CVD.
Rhodium strips obtained Rh(hfac)(CO)2 were much purer than those prepared from Rh(acac)(CO)2 precursor. Deposition at 283–328 K (10-55°C) was possible, due to the higher volatility of the hfac complex. Rh stripes deposited from the Rh(hfac)(CO)2 had resistivities ~3 times higher compared to the bulk rhodium (that is however, much better compared to the factor ~25-50 using analogous acac or thd complexes) - thus, Rh(hfac)(CO)2 can be considered, as most suitable precursor for laser CVD of rhodium metal films compared to Rh(acac)(CO)2, Rh(thd)(CO)2.
Rhodium (I) 2,2,6,6-tetramethyl-3,5-heptanedionate bis(carbonyl) Rh(thd)(CO)2 complex was as well employed for the deposition of rhodium stripes by laser CVD (same process as with Rh (hfac)(CO)2 Rhodium strips deposited from the Rh(thd)(CO)2 showed significant carbon contamination, similar to Rh(hfac)(CO)2. Rh strips prepared from Rh(thd)(CO)2 exhibited higher resistivities (~25 to 50 times higher compared to bulk Rh). (similar to Rh(acac)(CO)2).