A new hafnium β-ketoesterate Hf(tbob)4 (tbob=tert-butyl-3-oxobutanoate or tert-butylacetoacetate) has been synthesized by ligand exchange reaction using hafnium isopropoxide Hf2(OiPr)8(iPrOH)2 and tbobH, and characterized by elemental analysis, FT-IR, 1H NMR, mass-spectroscopy and TGA; it was determined that compound has certain volatility.
Hf(tbob)4 is volatile and it was tested as precursor for the deposition of HfO2 films by pulsed liquid injection MOCVD on Si(100) and R-plane sapphire substrates at 600–800 °C temperatures. As determined by XRD, and XPS, stoichiometric amorphous HfO2 films were obtained on Si substrates, whereas films on sapphire were relatively well crystallized (00l) monoclinic HO2. The growth was kinetically limited in all the temperature range studied (600–800°C). [[i]]
[i] Synthesis and characterization of hafnium tert-butylacetoacetate as new MOCVD precursor for HfO2 films
Sergej Pasko, Liliane G. Hubert-Pfalzgraf, Adulfas Abrutis, Materials Letters, Volume 59, Issues 14–15, June 2005, Pages 1836-1840 http://www.sciencedirect.com/science/article/pii/S0167577X05001308