Lithium dimethilamide (Dimethylaminolithium) LiNMe2 was applied as the p-dopant for the MOVPE growth of Li-doped ZnSe layers with high 1014 cm-3 - mid 1016 cm-3 carrier concentrations. ZnMe2 and SeMe2 were used as the Zn, Se sources, the growth temperature was 470-600°C. Light-emitting diodes consisting of p-ZnSe/n-ZnSe/n-GaAs were prepared; blue emission at room and low temperatures was demonstrated. [42]
Lithium dicyclohexylamide LiNCy2.has been tested as precursor for ALD growth of lithium-containing layers [30]