Cesium trimethylsilyloxide [CsOSiMe3]4 is crystalline solid, melting at 200°C with decomposition. [CsOSiMe3]4 was characterised by mass-spectroscopy , α = 4, and single crystal XRD. Cesium trimethylsilyloxide was determined to be tetramer [CsOSiMe3]4 (isostructural with Li-analog).
Cs(OSiMe3) is volatile complex (sublimation temperature is 80°C/ 10-6 Torr); cesium complex Cs(OSiMe3) is more stable thermally than Rb one (decomposes at 200°C vs. 140°C for Rb(OSiMe3)). Thus, Cs(OSiMe3) was proposed to be promising precursor for the deposition of Cs-containing thin films.[]