Titanium (III) amidinates (for example titanium(III) tris(N,N’-diisopropylacetamidinate) [Ti(iPr-Me-AMD)3] ) have been recently proposed for ALD growth of Ti-containing films by R. Gordon et al.
Titanium tris(N,N’-diisopropylacetamidinate) [Ti(iPr-Me-AMD)3] was synthesized by reaction of lithium N,N’-diisopropylacetamidinate (synthesized in situ by reaction of LiMe and 1,3-diisopropylcarbodiimide) with TiCl3 in organic solvent (Et2O or THF) at -30°C, the was warmed up to RT and stirred for 4hours; then the hexanes extract was evaporated and brown crystals of [Ti(iPr-Me-AMD)3] were obtained (yield 70%), the product was purified by sublimation at 70°C/50 mTorr. µ-Analysis data: Calcd for C24H51N6Ti: C, 61.13; H, 10.90; N, 17.82. Found: C, 60.22; H, 10.35; N, 17.14..
[Ti(iPr-Me-AMD)3] is volatile compound (subl.: 70 °C/ 50mTorr). The 1H NMR data and sublimation data supported the monomeric structure of [Ti(iPr-Me-AMD)3] both in solid state and in the solution.
Due to its volatility, [Ti(iPr-Me-AMD)3] was proposed as potential precursor for the ALD growth of Ti-containing layers.[[i]]
[i] R.G. Gordon, B.S. Lim, US Patent US7737290B2, «Atomic layer deposition using metal amidinates » , https://patents.google.com/patent/US7737290B2/en , https://patentimages.storage.googleapis.com/99/5e/7f/e20606f8f5f3ad/US7737290.pdf