Dimeric tert-butylgallium hydride -diethylamide [GaH(tBu) (μ-NEt2)]2 has been tested as a single-source precursor for the CVD growth of GaN. Gallium-rich films with limited nitrogen incorporation were produced at low temperatures (<250 °C) due to facile Et2NH elimination.
Its synthesis was accomplished by the addition of 4 equivalents of tBuLi to [Cl2Ga(μ-NEt2)]2, or by sequential tert-butyl additions to [Cl2Ga(μ-NEt2)]2. Two tert-butyl groups are lost as isobutylene resulting in Ga−H bond formation. The compound is remarkably air-, oxygen-, light- and thermally stable; however, in CHCl3 the hydride is replaced by chloride.[468]