Dysprosium tris(η5-cyclopentadienyl) DyCp3 was synthesized and characterized. The crystal structure of DyCp3 was determined using single crystal XRD; the space group and unit cell parameters were derived from powder XRD data.[i]
Dysprosium tris(cyclopentadienyl) adduct with tetrahydrofurane DyCp3(THF) was synthesized (by reaction of 1/3 mole ratio of DyCl3 and NaCp in THF solution, or refluxing complexes [DyCp2(S-nBu)]2 in THF) and structurally characterized [[ii], [iii]] DyCp3(THF) crystallizes in the monoclinic space group P21/n (Dc=1.69 g/cm-3).The THF molecule is coordinated to the Dy atom. A comparison of significant structural parameters for DyCp3(THF) and isostructural series LnCp3·THF (Ln= La, Pr, Nd, Gd) with the variation of atomic radii was done.
Dysprosium tris(η5-cyclopentadienyl) DyCp3 was proposed as potetial Dy MOCVD precursor
[iv]
[i] U. Baisch, S. Pagano, M. Zeuner, J. Schmedt auf der Günne, O. Oeckler, W. Schnick, Organometallics, 2006, 25 (12), pp.3027–3033, DOI: 10.1021/om060226w, « Synthesis, Structure, and Dynamics of Tris(η5-cyclopentadienyl)lanthanides and Bis(η5-cyclopentadienyl)[bis(trimethylsilyl)amido]cerium(III) ».
[ii] Ye Zhongwen, Wang Shaowu, Yu Yongfei, Shi Lei, Inorg. Chim. Acta, 1990, Vol. 177, Iss. 1, p.97–100, « Synthesis and structure of (η5-C5H5)3Dy·OC4H8 »
[iii] Zh. Wu, Zh. Xu, X. You, X. Zhou, X. Huang, J. Chen, Polyhedron, Vol.13, Iss.3, 1994, p.379–384, « Formation and crystal structures of (C5H5)3Sm(THF) and (C5H5)3Dy(THF) »
[iv] T.E. Glassman et al., US Patent 5,698,022, 1997, « Dysprosium tris(cyclopentadienyl) or susbstituted cyclopentadienyls (MeCp, Me3Cp) was proposed as potential CVD precursor for Dy-containing films », http://www.google.de/patents?hl=de&lr=&vid=USPAT5698022&id=YLoeAAAAEBAJ&oi=fnd&dq=Dy%28TMS%293+MOCVD&printsec=abstract#v=onepage&q&f=false
Dy((iPrCp)3 was suggested to be a potetially applicable as Dy MOCVD precursor
Dysprosium 1,2,3,4,5-pentamethylcyclopentadienyl 1,3,5-cyclooctatriene adduct Dy(Cp*)(COT) was synthesized and characterized as highly sensitive compound; it was reported to have sufficient vapor pressure at 160°C. to be used as Dy precursor in the plasma-enhanced (PE) CVD experiments.
Dy(Cp*)(COT) was vaporised at 160°C/3mbar and applied as precursor for the PECVD growth of Dy2O3 thin films at 350-400°C; however, layers were reported to poor-quality and contaminated with carbon. Pure oxide films can be formed in Ar/O2 or Ar/H2O plasmas, in N2O, CO2 at 350–400°C substrate temperatures and 1.0–1.5 W/cm2 plasma power densities.
The deposited Dy2O3 layers were characterized by microanalysis (for metal and carbon), FTIR spectroscopy, XPS, CTEM, electron diffraction, SEM.[i]
[i] A. Weber, H. Suhr, H. Schumann, R.-D. Köhn, Appl. Phys. A: Mater. Sci. & Process., Surfaces And Multilayers, 1990, Vol. 51, No. 6, 520-525, DOI: 10.1007/BF00324736, « Thin yttrium and rare earth oxide films produced by plasma enhanced CVD of novel organometallic π-complexes »