Dichloromethylvinylsilane SiCl2Me(CH=CH2) is compound containing Si and C atoms in the same molecule. Dichloromethylvinylsilane is very volatile at low temperature, so it does not require any carrier or reactive gas for the application as CVD precursor. Since there are Si-C bonds in this molecule, additional activation energy to make Si-C bond is not necessary, so the compound is suitable as single molecular precursor for the deposition of SiC layers and h-SiC nanowire at low deposition temperatures.
Dichloromethylvinylsilane SiCl2Me(CH=CH2) was applied as single molecular precursor for the deposition of h-SiC nanowires on 40-50nm Ni-covered Si(100) substrates at 800–1000 °C growth temperatures by high vacuum CVD method (working pressure was ~50 mTorr, deposition time 0.5–3 h). The surface and structural characteristics of the deposited
nanowires was investigated. Ni layers played an important role as a catalyst in growing h-SiC nanowires. The as-grown nanowires were first characterized by XRD (which showed a well-crystallized structure with highly oriented nanowires to (111) and (200) planes).
The shape of the h-SiC nanowires was studied by SEM and TEM. The chemical composition of nanowires was investigated by XPS and EDX; the complex of these methods suggested
that the nanowires were grown to [111] direction with well-crystallized structure, and the as-deposited β-SiC nanowires were wrapped with very thin C outer layer. The dichloromethylvinylsilane-grown SiC nanowires were suggested to be suitable as candidate
materials for nanoelectronic device applications and field emitters due to carbon-rich composition.[i]
[i] B.-C. Kang, S.-B. Lee, J.-H. Boo, Thin Solid Films, 2004, Vol. 464–465, p. 215–219; Proceedings of the 7th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures, « Growth of β-SiC nanowires on Si(100) substrates by MOCVD using nickel as a catalyst », doi:10.1016/j.tsf.2004.06.077, http://www.sciencedirect.com/science/article/pii/S0040609004008260, http://chem.skku.ac.kr/~jhboo/publications/paper/2004/3TSF-464%282004%29215.pdf