Tris(bis(trimethylsilyl)amino)antimony Sb[(N(SiMe3)3], combined
with Ge precursor and Te(iPr)2 as Te source, was applied as Sb precursor for the growth of Ge2Sb2Te5 layer doped with N and
Si, by ALD. The growth temperature was controlled such that a Te/(Ge+Sb) cation ratio was ~1.1, ~1.25, and ~1.45, respectively. The resistances of the produced GST thin
layers doped with N and Si were measured; it was found that the Te/(Ge+Sb) cation ratio increased, that is, the temperature increased, the resistance of the GST thin layer doped with N and Si decreased. The GST phase-change layer doped with N and Si formed
from this low-temperature-deposition Ge precursor had low reset current, meaning possibility of integration of memory devices containing the GST phase-change layer doped with N and Si, combined with high capacity and high rate operation of such device. [i]
[i] B Seo… - EP Patent 1,675,194, 2010, Germanium precursor and method of manufacturing a GST thin layer, http://www.freepatentsonline.com/EP1675194.html