Manganese metal Mn powder has been applied as Mn precursor for the preparation of GaMnN layers by Sandwich Sublimation Method, which is a modification of CVD; the method consists
of evaporation of the mixtures of Mn and GaN powders from the quartz boat placed on top of graphite heating element, and the resulting vapors carried by sublimation to the 1100-1200°C growth zone inside the tubular quartz reactor, where it is reacting
with NH3, forming GaMnN layers on top of GaN thin films obtained by MOCVD. The small 5mm distance between the evaporation and growth zones was indispensable for the transfer of Ga and Mn elements to the layers. The grown GaMnN thin films were characterized
by optical microscope, XRD and Raman. [[i]] The best best crystalline quality Ga1-xMnxN layers of were obtained with a growth rate of 25 μm/h; layers contained up to 4 atom % Mn according to SIMS measurements. GaMnN films were characterized
by XRD (structure refinement), rocking curves, map of reflections, and EXAFS; the measurements demonstrated good structural properties without phase separation. The measurements carried out by SQUID demonstrasted typical paramagnetic properties in the grown
GaMnN material.[[ii]]
[i]Michal Kaminski , Sławomir Podsiadło, http://www.science24.com/paper/3674 “Growth and characterization of GaN and GaMnN layers obtained by Sublimation Sandwich Method”
[ii] M. Kaminski, S. Podsiadlo, P. Dominik, K. Wozniak, L. Dobrzycki, R. Jakiela, A. Barcz, M. Psoda, J. Mizera, R. Bacewicz, M. Zajac, A. Twardowski, Chem. Mater., 2007, 19 (13), p.3139, DOI: 10.1021/cm062459j, http://pubs.acs.org/doi/abs/10.1021/cm062459j , “New Chemical Method of Obtaining Thick Ga1-xMnxN Layers: Prospective Spintronic Material”