Tetrahalogenated silanes (mainly tetrachlorsialne SiCl4) are broadly used as Si precursors in silicon and Si-contanng compounds CVD deposition processes.
Tetraiodosilane SiI4 was proposed as potential precursor for deposition of Si-based films by CVD. SiI4 is advantageous, as it is a simple Si-contaning precursor which can be used in thermally or UV-assisted CVD deposition processes. SiI4 has simple structure and does not require laborious synthetic procedures. Tetraiodosilane also provides high film growth rates and low minimum film deposition temperatures.
SiI4 used in conjunction with NH3 and N2 was applied for the deposition of SiNx (Si3N4) films, with minimum deposition temperature of ~250° C (or by activation
using UV light with wavelengths <260 nm); the achieved growth rate at that temperature was ~50 nm/min.[i]
[i] BC Arkles, AE Kaloyeros - US Patent 6,586,056, 2003, « Silicon based films formed from iodosilane precursors and method of making the same », http://www.google.de/patents?hl=de&lr=&vid=USPAT6586056&id=m2EMAAAAEBAJ&oi=fnd&dq=rhenium+CVD+precursors&printsec=abstract#v=onepage&q=rhenium%20CVD%20precursors&f=false