Trimethylamine Aluminaborane [AlH2BH4∙Me3N]
Trimethylamine Aluminaborane, [AlH2BH4∙Me3N] is air-sensitive, but thermally stable (at least at ambient temperatures in inert gas atmosphere) and volatile liquid and is therefore a promising Al and Al-B single source CVD precursor with growth onset temp 100°C.
The decomposition pathway on Si(100) us following:
(Me3N)AlH2(BH4)(g) → (Me3N)BH3(g) + 3/2 H2(g) +Al(s)
Pure Al films have been obtained from [AlH2BH4∙Me3N] precursors, the growth rate was few tens of nm/min.