[i] N. R. M. Crawford, J. S. Knutsen, K.-A. Yang, G. Haugstad, S. McKernan, F. B. McCormick and W. L. Gladfelter, Chem. Vap.Deposition, 1998, 4, 181–183.
[ii] P. A. Lane, P. E. Oliver, P. J. Wright, C. L. Reeves, A. D. Pitt, B.Cockayne, Chem. Vap. Deposition, 1998, 4, 183–186.
[iii] N. Deo, M. F. Bain, J. H. Montgomery and H. S. Gamble, J. Mater. Sci.: Mater. Electron., 2005, 16, 387–392
[iv] A. R. Ivanova, G. Nuesca, X. Chen, C. Goldberg, A. E. Kaloyeros, B.Arkles and J. J. Sullivan, J. Electrochem. Soc., 1999, 146, 2139–2145.
Pure Co films were obtained using Co(NO)(CO)3 at high substrate temperatures [[i]]
[i] A. R. Ivanova, G. Nuesca, X. Chen, C. Goldberg, A. E. Kaloyeros, B.Arkles and J. J. Sullivan, J. Electrochem. Soc., 1999, 146, 2139–2145.
Co(NO)(CO)3 has been applied for the growth of Co films in Co/Pt multilayers by MOCVD on the oxidised Si substrates at 450 °C, in H2 ambient at process pressure 2-torr. The magnetic properties of Co/Pt/Co and Co/Pt multilayer structures (where Pt was deposited by by E-beam evaporation) were compared with the single Co layers of similar thicknesses, ; while Co layers showed hard magnetic properties with coercivity Hc value 360 Oe and 500 Oe (for the 30- and 15-nm Co layers, respectively), whereas the multiple layers of Co/Pt/Co and Co/Pt (having Co thickness 15- and 30-nm with 1.5-nm Pt spacer-layer) showed significantly lower (soft) magnetic properties with H c values 51 and 49 Oe, respectively, (significantly less than the H c values of single Co layers on Si/SiO2). Single and multiple layers of Co (or Co/Pt) platinum were annealed and compared with the as-deposited layers. Single Co layers and multilayer Co/Pt structures had similar roughness by SEM and AFM; Magnetic images were observed by MFM and analyzed in terms of domain structure.[[i]]
[i] Nirmalendu Deo, Michael F. Bain, John H. Montgomery, Harold S. Gamble, J. Mater. Science: Materials in Electronics, 2012, Vol 23, Iss 10, pp 1881–1886, « Influence of thin platinum layer on the magnetic properties of multiple layers of CVD cobalt thin films »
Cobaltnitrosyltricarbonyl (CNT) Co(NO)(CO)3 has been applied as the dopant precursor for the growth of Co-doped semi-insulating epitaxial InP layers by low pressure MOCVD); at optimized conditions semi-insulating InP:Co layers (ϱ≈105ωcm) with featureless surface morphology and thickness uniformity < ±5% over 9 cm2 substrates were obtained. SIMS depth profiles for InP:Co and similarly grown InP:Fe indicated variation of the transition metal impurity concentration with depth; for the certain growth conditions ome order of magnitude less average Co concentration than Fe was obtained. Performance characteristics of early V-groove buried crescent (BC) lasers incorporating semi-insulating InP:Co as current blocking layers were determined; these lasers exhibited CW threshold current as low as 8 mA at room temperature and high temperature operation up to 100°C[[i]]
[i] K.L. Hess, S.W. Zehr, J. Cryst. Growth, Vol.93, Iss.1–4, 1988, p.576–582
http://www.sciencedirect.com/science/article/pii/0022024888905866, “Semi-insulating cobalt doped indium phosphide grown by MOCVD”
Cobalt (nitrosyl) bis(carbonyl) (dimethyltelluride) Co(NO)(CO)2(TeMe2) (and PEt3, TeEt2 analogues for comparison) was synthesized and assessed for MOCVD applications. The complexes had sufficient vapor pressures (0.1–4.0 mmHg) even at RT to achieve high concentrations in the vapour state , vapor pressures were measured using Knudson effusion method. Vapour-phase thermal degradation at 180–250°C was carried in a stream of H2; the deposites were analysed by EDX and XPS. In summary, [Co(CO)2(NO)(TeMe2)] as precursor produced clean Co films after decomposition at 150°C [[i][PS1] ]
[i] Ron S. Dickson, Ping Yin, Mingzhe Ke, Julian Johnson, Glen B. Deacon
Polyhedron, Volume 15, Issue 13, July 1996, Pages 2237–2245
http://www.sciencedirect.com/science/article/pii/0277538795004807 The assessment of some cobalt and cobalt-tellurium complexes for MOCVD applications