Erbium(III) tris(N,N’-diisopropyl-2-dimethylamidoguanidinate) [Er(DPDMG)3] was applied as a novel alternative erbium precursor for the deposition of Er2O3 layers. The complex is monomeric, as was demonstrated by single crystal XRD, NMR and EI-MS. Thermal analysis has shown that [Er(DPDMG)3] is volatile and stable under evaporation conditions.
[Er(DPDMG)3] (with O2 as oxidant) was evaluated as precursor for the MOCVD deposition of Er2O3 thin films; uniform high quality Er2O3 layers were obtained in the
350–700 °C temperature range on Si(100) substrates; layer structural, morphological, compositional and electrical properties were studied. [Er(DPDMG)3] proved to be suitable as MOCVD precursor for the growth of stoichiometric Er2O3 thin films potentially
applicable as high-k materials.[i]
[i] A.P. Milanov, K. Xu, S. Cwik, H. Parala, T. de los Arcos, H.-W. Becker, D. Rogalla, R. Cross, Sh. Paul, A. Devi , Dalton Trans., 2012,41, 13936-13947, DOI: 10.1039/C2DT31219K, « Sc2O3, Er2O3, and Y2O3 thin films by MOCVD from volatile guanidinate class of rare-earth precursors », https://pubs.rsc.org/en/content/articlelanding/2012/dt/c2dt31219k/unauth#!div