In(N3)[(CH2)3NMe2]2was used as a single source precursor for the growth of InN films and whiskers in cold wall CVD reactor at 300-500°C [[i]] InNxHy species were detected by molecular beam sampling with quadrupole mass spectrometry during study of the fragmentation of this organoindium azide during InN deposition by OMCVD. The presence of covalent In-N bond in this single-source precursor provides the possibility of depositing InN at substrate temperatures of 350-450 °C - significantly lower than that required for a conventional process. [[ii]]
In(N3)[(CH2)3NMe2]2 has been applied for the growth of InN by MOCVD at 300-500°C. [4]
[i] A. Devi, H. Parala, W. Rogge, A. Wohlfart, A. Birkner, R.A. Fischer, J. Phys. IV France 11 (2001), Pr3-577-Pr3-584
[ii] J. Schäfer, J. Wolfrum, R. A. Fischer, H. Sussek, Chem. Vapor Dep., 1999, Vol. 5, Iss. 5, p. 205 - 207