Tert-butyl gallium sulfide tetramer [Ga(tBu)S]4
Tert-butylgallium sulfide has tetrameric structure [Ga(tBu)S]4 , as determined by structural characterisation using single-crystal XRD (see Fig. )
[Ga(tBu)S]4 has been applied as the single-source precursor for the growth of polycrystalline layers of gallium sulfide by photo-assisted CVD at temperatures lower than by thermal CVD. The stoichiometry of the films is dependent on the excitation wavelength window. The films possessed thermodynamically stable hexagonal phase rather than the metastable cubic phase produced by thermal CVD. [[i] ]
In contrast, GaS films deposited by thermal CVD using gallium cluster [(t‐Bu)GaS]4 as a single-source MOCVD precursor, retained the cubane core of the precursor is retained in the deposited film producing a cubic phase. Strong enhancement of photoluminescence intensity (two order of magnitude) has been observed for GaAs surfaces coated with CVD-cotated GaS , as compared to untreated GaAs. The increase in photoluminescence intensity was explained by effective reduction in surface recombination velocity and/or band bending. GaAs films were characterized by XRD, XPS, RBS and TEM. [[ii]]
[i] Patrick J. Pernot, Andrew R. Barron, Chemical Vapor Deposition, Volume 1, Issue 3, pages 75–78, November 1995, “Photo-assisted chemical vapor deposition of gallium sulfide thin films”
[ii]A.N. MacInnes, M.B. Power, A.R. Barron, Jenkins, Phillip P.; Hepp, Aloysius F.;
Applied Physics Letters, Issue Date: Feb 1993, Volume: 62 Issue:7, On page(s): 711 - 713