Trilithium nitride Li3N was reported to have some volatility (evaporating at 400°C, with H2 as carrier gas), and was tested as MOCVD precursor.
Lithium nitride Li3N has some volatility and has been applied as Li-dopant (p-type conductivity) for MOVPE growth of ZnSe on GaAs substrates (with ZnMe2 and Et2Se as source materials). The evaporation of Li3N dopant source was performed at 400°C; hydrogen was used as a carrier gas. Low‐resistivity p‐type ZnSe layers have been successfully grown (The lowest achieved resistivity was 0.2 Ωcm, the highest carrier concentration was 9×1017 cm-3 which is very high value for this type of material. ZnSe p(Li)‐n diodes exhibited blue emission with spectral peak located at 467 nm [29]