Mn(S2CNH2)2 for Mn-doped ZnS by MOCVD
Mn dithiocarbamate Mn(S2CNH2)2, combined with Zn dithiocarbamate, was applied as precursor for the growth of
electroluminescent ZnS:Mn films by low-temperature spray MOCVD (or DTC-CVD). Homogeneous polycrystalline layers of ZnS:Mn having luminance over 103 cd/m2 and luminous
efficiency ~0.6 lm/W (λ=585 nm) were obtained at growth rate of 60-120 nm/min by sprayng precursor organic solution in air at atmospheric pressure on the substrate
having temperature 220-280°C.[[i] ] Additional annealing of the grown ZnS:Mn films in vacuum or N2 atmosphere lead to significant
increase of luminance and luminous efficiency: luminance increased to 1.1×104 cd/m2, with luminous efficiency of 6 lm/W.[[ii]]
[i] L V Zavyalova, A.I Beletski, G S Svechnikov, Semicond. Sci. Technol. 14 446 doi:10.1088/0268-1242/14/5/013, http://iopscience.iop.org/0268-1242/14/5/013, “Electroluminescent ZnS:Mn films prepared by an MOCVD method based on dithiocarbamate precursors”
[ii] L.V Zavyalova, A.K Savin, G.S Svechnikov, Displays, Vol. 18, Iss. 2, 1997, p.73–78, http://www.sciencedirect.com/science/article/pii/S0141938297000073, “ZnS:Mn electroluminescent films prepared from chelate metal organic compounds”
Manganese (II) dibutyldithiocarbamate
Mn(S2CNBu2)2 was proposed as potential precursor for the growth of ZnS:Mn phosphor layers by MOCVD for use in thin-film electroluminescent components [[i]]
[i] E. L. Soininen; G. Harkonen; M. Lahonen, R. Tornqvist; J. Viljanen, US 6113977 A, http://www.google.com/patents/US6113977, “Method of growing a ZnS:Mn phosphor layer for use in thin-film electroluminescent components”
Mn(S2CNMenHex)3 for MnS by MOCVD
The air stable manganese (III) methyl-n-hexyldithiocarbamate Mn(S2CNMenHex)3 was demonstrated to be useful single-source
precursor for the deposition of Mn chalcogenides by aerosol-assisted (AA) CVD. As-deposited manganese sulfide thin films was single phase independent of the growth temperatures, as indicated by XRPD. The grown MnS layers were characterized by SEM/EDAX and
TEM.[[i]]
[i] F. Srouji, M. Afzaal, J. Waters, P. O'Brien, Chem. Vapor Dep., 2005, vol. 11, Iss. 2, p.91–94, DOI: 10.1002/cvde.200404185, “Single-Source Routes to Cobalt Sulfide and Manganese Sulfide Thin Films”