Magnesium diethylcarbamate Mg6(O2CNEt2)12 has been applied as precursor for SSCVD of MgO thin films with highest quality reported with this technique. Due to the nature of the precursor, the chemical reactions occurring at the surface during growth resulted in films having purely (111) orientation, grown at high growth rate, low flux environment and without the amorphous underlayer. [[i] ]
[i]MR Hill PhD thesis - 2006 - unsworks.unsw.edu.au