Manganese dichloride MnCl2 is crystalline solid , M= 125.844, d= 2.98
MnCl2 vapor as applied as Mn precursor for the growth of manganese silicide layers MnSx on Si(111) substrates;
Si source was silicon substrate itself. A temperature of 500 °C was sufficient to form the MnSix (x ∼ 2) similar to MnSi1.7 phase. When the thickness of Mn-silicide layers exceeded certain thickness,
the growth of the MnSix (x ∼ 1) layers similar to MnSi phase occurred. [[i]]
[i] H. Junhua, T. Kurokawa, T. Suemasu, Sh. Takahara, M. Itakura, H. Tatsuoka, physica status solidi (a), 2009, Vol.206, Issue 2, p.233–237. DOI: 10.1002/pssa.200824246, “Growth of manganese silicide layers on Si substrates using MnCl2 source”
MnCl2 was mentioned to be tested as precursor for Mn doping for ZnO layers, however it was found to be inefficient, resulting in relatively low Mn concentrations in the
films, well below 1%. [[i]]
[i] K Kopalko, A Wójcik, M Godlewski, Physica status solidi (c), Applied Research, 2005, vol. 2, Iss.3, pp.1125-1130, DOI 10.1002/pssc.200460660 , “Growth by atomic layer epitaxy and characterization of thin films of ZnO” and refs therein.
Manganese diodide MnI2 is crystalline solid , M= 308.75, d=5,01 g/cm³, melting point 827°C
Manganese iodide MnI2 was synthesized from high purity elements Mn and I2 (impurity level <1*10E-5 at.%) in the sealed vacuumed quartz ampula at 1000-1200 K in the synthesis zone and 700-750K in the crystallization zone
MnI2 and PbI2 were used for the vapor phase growth (CVD-like) of Mn-doped PbI2 crystals (concentration 0.001–2 ат. %). The concentration
of Mn in the grown material was determined by XRD microanalysis. Low temperature PL spectra were studied in the range of the main exiton transition of PbI2 monocrystals using continuous He-Cd laser at 442.1 nm,
spectral line width was 0.02 нм. [[i]]
[i] Ó Rybak O.V, Elektronika (Електроніка) – 2008. – №619. , page 52-56, “VAPOR-PHASE CRYSTAL GROWTH AND PROPERTIES OF PbI2 DOPED WITH Mn”, http://ena.lp.edu.ua:8080/handle/ntb/1902
MnI2 has been applied for the preparation of Mn-doped silicates by sublimation of MnI2 in an Ar flow at 550°C and incorporation of the Mn ions into the extra-framework positions of porous
silicates (CVD-like process). [[i]]
[i]N.Novak Tušar, S.Jank,R.Glaeser, Chem.Cat.Chem, Vol.3, Iss.2, p.254,2011, “Manganese-Containing Porous Silicates: Synthesis, Structural Properties and Catalytic Applications”,
http://onlinelibrary.wiley.com/doi/10.1002/cctc.201000311/abstract;jsessionid=28B6BD3B8C6885F2CD15B691FE83544E.f01t03?deniedAccessCustomisedMessage=&userIsAuthenticated=false Manganese‐Containing Porous Silicates: Synthesis, Structural Properties and Catalytic Applications
Manganese (II) chloride bis(pyridine) MnCl2(py)2 was reported to be tested as Mn-dopant for ZnS deposited
by MOCVD. [[i]]
[i] The Preparation of ACEL Thin Films, Final rept., (DTIC Document) May 1990, Corporate Author: VECHT (ARON) AND ASSOCIATES LONDON (UNITED KINGDOM)