Chromium (III) tetraethylborane Cr(BEt4)3

Chromium (III) tetraethylborane Cr(BEt4)3

Chromium (III) tetraethylborane Cr(BEt4)3 has been applied as precursor for the deposition of chromium boride powder by thermal CVD at 300°C and process pressure 0.1 Torr, without carrier gas. Precursor was evaporated at 60°C, resulting in ~10 Torr vapor pressure.[896]

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