Metallic Ga in combination with NH3 as nitrogen source was used for the growth of < nonpolar GaN film on lattice-matched [100] γ-LiAlO2 substrates by CVD. Gallium III acetylacetonate is another .? GaN film was oriented in the nonpolar m-plane with [1010] orientation according to x-ray diffraction. TEM was used for defect analysis. Low-temperature photoluminescence was dominated by neutral donor bound excitons; the yellow luminescence was negligible. As-grown GaN {1010} epilayer on [100] γ-LiAlO2 substrates had good quality by Raman spectroscopy. [395]
Ga as source and NH3 as co-reactant have been applied for the CVD growth of GaN nanowires on Si(111) and Si(100) substrates, using Ar carrier gas. The best results were obtained for a deposition temperature of 950°C; optimal catalysts were Au and metallic Ni; the use of nickel nitrate lead to formation of SiOx nanowire bunches in addition to GaN nanowires. [396]