ALUMINUM ALKYLAMIDES

Tris(dimethylamido)aluminum [Al(NMe2)3]2

   Tris(dimethylamido)aluminum [Al(NMe2)3]2 is solid at room temperature (melting point 90°C). [Al(NMe2)3]2 was reported to be useful as MOCVD precursor at the temperatures down to 200°C.

Tris(diethylamido)aluminum [Al(NEt2)3]2

    Tris(diethylamido)aluminum [Al(NEt2)3]2 is a non-pyrophoric liquid aluminum precursor. [Al(NEt2)3]2 is dimeric also in liquid phase, has reasonable vapor pressure (0.2Torr/100°C) and decomposition point >240°C.[[i]]

 [i] AirLiquide

[Al(NEt2)3]2 for Al2O3 by ALD

     [Al(NEt2)3]2 was  proposed as Al precursor for the Al2O3 deposition by ALD, as well as for the growth of HfAlO films in cocktail mixture with Hf(NEt2)4. []

[Al(NEt2)3]2 for AlN by MOCVD

    Tris(diethylamido)aluminum [Al(NEt2)3]2 was shown to be a useful precursor to aluminum nitride (AlN) thin films by MOCVD [[i]]

[i] J. Vac. Sci. Technol. 14, 306, (1996)

Aluminum bis(dimethylamide) (N-ethyl-N’,N’dimethylethylenediamide) [Al(NMe2)2(NEt-CH2CH2NMe2]2

Molecular structure of Al(NMe2)2(NEt-CH2CH2NMe2)

         Aluminum bis(dimethylamide) (N-ethyl-N’,N’dimethylethylenediamide) Al(NMe2)2(NEt-CH2CH2NMe2 was reported to be a non-pyrophoric liquid at room temperature with a viscosity of 90 centipoise (at 40°C) and vapor pressure 0.3 Torr / 65°C.

[Al(NMe2)2(NEt-CH2CH2NMe2]2 for AlN by MOCVD

       Aluminum bis(dimethylamide) (N-ethyl-N’,N’dimethylethylenediamide) Al(NMe2)2(NEt-CH2CH2NMe2) , combined with NH3, was applied as Al precursor for the growth of amorphous AlN layers by MOCVD in mild conditions (growth temperatures from 150°C to 400°C).[i]

[i]  S.T. Barry, R.G. Gordon, V.A. Wagner, Mat. Res. Soc. Symp. Proc., 2000, p.? (Chemical Processing of Dielectrics, Insulators and Electronic Ceramics).

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