Dimethylindium methylselenide [InMe2(μ-SeMe)]2 was used as a single-source precursor for the growth of InSe by MOCVD at temperatures 270–370°C. [4]
Di-tert-butylindium tert-butylselenide [(tBu)2In(μ-SetBu)]2 was applied as single-source precursors for the growth of indium selenide InSe thin at 230−420 °C by low-pressure MOCVD. Indium rich InSe films were obtained according to EDX. Film morphology and crystallinity were highly dependent on the precursor and the deposition temperature according to TEM: at low temperatures <330 °C ball-like morphologies were obtained, whereas higher growth temperatures 350−370 °C resulted in highly crystalline textured films. [518]