ALKYLARSINES
Alkylarsines became now common precursors in III/V MOCVD of GaAs – vased materials as well as dopants Si-semiconductors. Their important advantage vs. conventional AsH3 precursor is much lower toxicity. However, presence of alkyl radicals imply some limitations on the growth temperature, as it can result in higher carbon contamination.
Trimethylarsine AsMe3 is used as precursor for MOCVD growth of arsenide materials.
Tertiary-butylarsine tBuAsH2 is now one of most common precursors for the growth of (Ga,In)(As,P) materials by MOCVD.
Tetraethylbiarsine As2Et4
Tetraethylbiarsine As2Et4 has been deponstrated to be promising source for for p-type doping of ZnTe (see TeiPr2 for ZnTe, W Kuhn, H P Wagner, H Stanzl, K Wolf, K Worle, S Lankes, J Betz, M Worz, D Lichtenberger, H Leiderer, W Gebhardt and R Triboulet, Semicond. Sci. Technol. 1991, 6 A105 )