Sn(acac)2Br2 (5mol %, with In(acac)3 dissolved in acetylacetone (concentration 0.2 or 0.02M)) was applied for the growth of Sn doped In2O3 (ITO) layers glass (Corning #1737) substrates by AACVD. Layers with electrical resistivity 1–2×10–4 Ωcm, carrier concentration 1–3×1021 cm–3, Hall mobility 20–50 cm2 V–1s–1 and optical bandgap 4.0∼4.1 eV were obtained [512]