Titanium (cyclopentadienyl) dicarbonyl TiCp2(CO)2 and its alkyl-Cp-substituted analogues was synthesized in the following way:
Ti(h5-C5H4R) Cl2 + Zn (or Mg) + 2 CO → Ti(h5-C5H4R)(CO)2 + ZnCl2 (or MgCl2)
Titanium bis(cyclopentadienyl) dicarbonyl TiCp2(CO)2 was applied as dopant for the LP-MOCVD growth of Ti-doped InP layers (as an alternative to Fe-doped semiinsulating
InP, which was shown to lose its semiinsulating character in contact with p+-InP:Zn substrate. The incorporation behavior of Ti in MOCVD grown InP as a function of growth parameters was studied by SIMS. The optimization of growth conditions for obtaining abrupt
Ti doping profiles was performed. [[i]]
[i] T. Wolf, A. Krost, D. Bimberg, F. Reier, P. Harde, J. Winterfeld, H. Schumann, J. Cryst. Growth, 1991, Vol.107, Iss. 1–4, p. 381-385 , « Transition metal doping of LP-MOCVD-grown InP », doi.org/10.1016/0022-0248(91)90490-V, https://www.sciencedirect.com/science/article/pii/002202489190490V