Rubidium trimethylsyliloxide Rb(OSiMe3) is volatile (sublimes at 80°C/ 10-6 Torr); less stable than cesium analog (decomposes at 140°C vs. 200°C for cesium).
Due to its volatility, Rb(OSiMe3) can be potentially applied as MOCVD and ALD precursor for the growth of Rb-containing layers.