Titanium (0) bis(benzene) (or bis(benzene)titanium) Ti(η 6-C6H6)2 (Ti(benzene)2), was proposed as potential Ti precursor for the growth of Ti-doped III-V layers, f.e. semiinsulating Ti-doped InP layers by MOCVD.[i]
It was reported that when using (Ti(benzene)2 as CVD Precursor the dissociation of the organic units on the metal surface occurs, leading to significant
carbon impurities and formation of TiC admixture.
[i] A.G. Dentai, Ch.H. Joyner, Jr., T.W. Weidman, John L. Zilko, US4782034A, US Grant, « Semi-insulating group III-V based compositions doped using bis arene titanium sources », https://patents.google.com/patent/US4782034A/en