EtSnH3 was proposed as potential tin CVD precursor []
Phenyl- d3-stannane PhSnD3 was applied as MOCVD preursor for the growth of diamnd-cubic Ge-Sn alloys [[i]]
[i] J. Taraci, J. Tolle, J. Kouvetakis, M. R. McCartney, David J. Smith, J. Menendez, M. A. Santana, Appl. Phys. Lett., 2001, Vol 78, No23, p.3607-3609, Simple chemical routes to diamond-cubic germanium-tin alloys
http://biblioteca.cinvestav.mx/indicadores/texto_completo/cinvestav/2001/88415_2.pdf