Antimony trichloride SbCl3 (combined with Te(SiEt3)2) has been applied as antimony precursor for the CVD growth of Sb2Te3 films at temperature as low as 60°C, as well as for the ALD
growth of the phase change material GST (germanium antimony telluride, Ge2Sb2Te5) (with GeCl2·C4H8O2 as germanium source). The byproduct in both ALD processes was Et3SiCl, and about 78% (36%) of it was released
during the SbCl3 (GeCl2·C4H8O2) pulse. It was concluded that Te(SiEt3) surface groups serve as reactive sites for the metal precursors, cf. −OH surface groups in the oxide ALD processes that use water as the oxygen source. The mechanism of the
SbCl3-(Et3Si)2Te reaction during GST deposition changed in the way that during the SbCl3 pulse only ~50% of the Et3SiCl byproduct was released. When the SbCl3-(Et3Si)2Te process was executed on Al2O3 and Au substrates surfaces, similar effect was observed
as well. [[i]]
[i] Kjell Knapas, Timo Hatanpää, Mikko Ritala and Markku Leskelä, Chem. Mater., 2010, 22 (4), pp 1386–1391
Antimony pentachloride SbCl5 was used as a precursor for the deposition of Sb-Ge-S glass films [560]
[i] C.C. Huang, B.Gholipour, J.Y. Ou, K.Knight, D.W. Hewak, Electron. Lett., 2011,, Vol.47 , Iss.4, p. 288 - 289
[ii] DW Hewak, CC Huang, B Gholipour, F Al-Saab… - epcos.org, « Thermally Stable, Low Current Consuming Gallium and Germanium Chalcogenides for Consumer and Automotive Memory Applications », http://www.epcos.org/library/papers/pdf_2011/Oral-Papers/S3-04.pdf